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PDF EMP212 Data sheet ( Hoja de datos )

Número de pieza EMP212
Descripción 9.50 - 12.0 GHz Power Amplifier MMIC
Fabricantes Excelics Semiconductor 
Logotipo Excelics Semiconductor Logotipo



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No Preview Available ! EMP212 Hoja de datos, Descripción, Manual

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UPDATED 04/04/2008
EMP212
9.50 – 12.0 GHz Power Amplifier MMIC
FEATURES
9.5 – 12.0 GHz Operating Frequency
30.5dBm Output Power at 1dB Compression
18 dB Typical Power Gain
43dBc OIMD3 @ EACH TONE Pout 19dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2500um X 1600um
Thickness: 85um ± 15um
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, Vdd*=7V, Idsq=800mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX
UNITS
F Operating Frequency Range
9.5 12.0 GHz
P1dB
Gss
OIMD3
Input RL
Output Power at 1dB Gain Compression
Small Signal Gain Vdd=5V
Output 3rd Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 19dBm
Ids= 60%±10%Idss
Input Return Loss
29.5
15
30.5
18
-43
-10
-40
-7
dBm
dB
dBc
dB
Output RL Output Return Loss
-8 -5
dB
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
950 1250 1500
mA
Vdd Drain Voltage
7 8V
Rth Thermal Resistance (Au-Sn Eutectic Attach)
8.5 oC/W
Tb Operating Base Plate Temperature
*Unless otherwise specified
-35 +85 ºC
MAXIMUM RATINGS AT 25°C1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
VDS Drain to Source Voltage
12V 8 V
VGS Gate to Source Voltage
-8V -4 V
IDD Drain Current
Idss 1300mA
IGSF Forward Gate Current
114mA
19mA
PIN Input Power
27dBm
@ 3dB compression
TCH Channel Temperature
175°C
150°C
TSTG
Storage Temperature
-65/175°C
-65/150°C
PT Total Power Dissipation
12.4W
10.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS<(TCH –THS)/RTH; where THS =Operating Base Plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised April 2008

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