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PDF EMP211 Data sheet ( Hoja de datos )
| Número de pieza | EMP211 | |
| Descripción | 9.5 - 12.0 GHz Power Amplifier MMIC | |
| Fabricantes | Excelics Semiconductor | |
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UPDATED 06/19/2006
www.DataSheet4U.com
EMP211
9.5 – 12.0 GHz Power Amplifier MMIC
FEATURES
• 9.5 – 12.0 GHz Operating Frequency Range
• 27.0dBm Output Power at 1dB Compression
• 17.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 17dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2500um X 1130um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=380mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
F Operating Frequency Range
9.5 12.0
P1dB
Output Power at 1dB Gain Compression
25.5
27.0
Gss
OIMD3
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 17dBm
14.0
17.0
-40
-37
Input RL
Input Return Loss
-10 -7
Output RL Output Return Loss
-10 -7
Idss
Saturate Drain Current
VDS =3V, VGS =0V
460
619
700
VDD Power Supply Voltage
78
Rth Thermal Resistance (Au-Sn Eutectic Attach)
15
Tb Operating Base Plate Temperature
-35 +85
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
8V
VGS Gate to Source Voltage
-4 V
IDD Drain Current
Idss
IGSF Forward Gate Current
7.5mA
PIN Input Power
@ 3dB compression
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/150°C
PT Total Power Dissipation
7.9W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
oC/W
ºC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised June 2006
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EMP211.PDF ] | |
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