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PDF EMP209 Data sheet ( Hoja de datos )

Número de pieza EMP209
Descripción 17.5 - 20.0 GHz Power Amplifier MMIC
Fabricantes Excelics Semiconductor 
Logotipo Excelics Semiconductor Logotipo



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No Preview Available ! EMP209 Hoja de datos, Descripción, Manual

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UPDATED 05/08/2008
EMP209
17.0 – 20.0 GHz Power Amplifier MMIC
FEATURES
17.0 – 20.0 GHz Operating Frequency Range
29.0dBm Output Power at 1dB Compression
15.0 dB Typical Small Signal Gain
-40dBc OIMD3 @Each Tone Pout 19.5dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2100um x 2650um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=760mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX UNITS
F Operating Frequency Range
17.0
20.0 GHz
P1dB
Output Power at 1dB Gain Compression
28.0
29.0
dBm
Gss
OIMD3
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 19.5dBm
12.0
15.0
dB
-40 -37 dBc
Input RL Input Return Loss
-15 -10 dB
Output RL Output Return Loss
-15 -10 dB
Idss
VDD
Rth
Saturate Drain Current
Power Supply Voltage
VDS =3V, VGS =0V
Thermal Resistance (Au-Sn Eutectic Attach)
858 1072 1286 mA
78V
9 oC/W
Tb Operating Base Plate Temperature
-35 +85 ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
VDS
VGS
IDD
IGSF
PIN
TCH
TSTG
PT
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
VALUE
8V
-4 V
Idss
15mA
@ 3dB compression
150°C
-65/150°C
12.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3
Revised May 2008

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