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Renesas Technology - Silicon N Channel MOS FET High Speed Power Switching

Numéro de référence RJL6018DPK
Description Silicon N Channel MOS FET High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJL6018DPK fiche technique
RJL6018DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Built-in fast recovery diode
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1
2
3
G
S
www.DataSheet4U.com
REJ03G1819-0100
Rev.1.00
Sep 11, 2009
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
600
±30
27
81
27
81
6
1.9
200
0.625
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1819-0100 Rev.1.00 Sep 11, 2009
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