(PDF) RJL6012DPE Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	RJL6012DPE
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! RJL6012DPE Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg www.DataSheet4U.com REJ03G1750-0100 Rev.1.00 Oct 26, 2009 D 1. Gate 2. Drain 3. Source 4. Drain S Ratings 600 ±30 10 30 10 30 3 0.49 100 1.25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C REJ03G1750-0100 Rev.1.00 Oct 26, 2009 Page 1 of 3 1 page

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