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PDF RJK6006DPD Data sheet ( Hoja de datos )
| Número de pieza | RJK6006DPD | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RJK6006DPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-state resistance
RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)
High speed switching
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
12 3
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
Symbol
VDSS
VGSS
ID Note4
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAPNote3
EARNote3
Pch Note 2
ch-c
Tch
Tstg
Preliminary Datasheetwww.DataSheet4U.com
REJ03G1935-0100
Rev.1.00
Jun 01, 2010
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
600
30
5
15
5
15
5
2
77.6
1.61
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G1935-0100 Rev.1.00
Jun 01, 2010
Page 1 of 6
1 page  
RJK6006DPD
10
Transient Thermal Impedance vs. Pulse Width
Preliminary
www.DataSheet4U.com
TC = 25°C
1
Single pulse
0.1
0.01
0.001
0.0001
0.001
0.01 0.1
1
Pulse Width PW (s)
10
100 1000
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 200 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
REJ03G1935-0100 Rev.1.00
Jun 01, 2010
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK6006DPD.PDF ] | |
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