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PDF RJK5030DPD Data sheet ( Hoja de datos )

Número de pieza RJK5030DPD
Descripción Silicon N Channel MOS FET High Speed Power Switching
Fabricantes Renesas Technology　
Logotipo Renesas Technology Logotipo



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No Preview Available ! RJK5030DPD Hoja de datos, Descripción, Manual

RJK5030DPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-state resistance
RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)
High speed switching
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
12 3
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
VDSS
VGSS
ID
ID (pulse) Note1
IAPNote3
Pch Note 2
Channel to case thermal Impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Preliminary Datasheetwww.DataSheet4U.com
REJ03G1913-0100
Rev.1.00
Apr 12, 2010
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
500
30
5
20
5
41.7
3.0
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
W
C/W
C
C
REJ03G1913-0100 Rev.1.00
Apr 12, 2010
Page 1 of 5

1 page




RJK5030DPD pdf
RJK5030DPD
Package Dimensions
Package Name
MP-3A
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZG-A
Previous Code
TMP3
MASS[Typ.]
0.32g
6.6
5.3 ± 0.2
0.76 ± 0.2
0.76
2.3 ± 0.2
2.3
0.5 ± 0.2
0.1 ± 0.1
0.5 ± 0.2
Preliminary
www.DataSheet4U.com
Unit: mm
Ordering Information
Part No.
RJK5030DPD-00
Quantity
3000 pcs
Taping
Shipping Container
REJ03G1913-0100 Rev.1.00
Apr 12, 2010
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