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Renesas Technology - Silicon N Channel Power MOS FET

Numéro de référence RJK03E3DNS
Description Silicon N Channel Power MOS FET
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJK03E3DNS fiche technique
RJK03E3DNS
Silicon N Channel Power MOS FET
Power Switching
Preliminary Datasheetwww.DataSheet4U.com
REJ03G1905-0200
Rev.2.00
Apr 06, 2010
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 9.0 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 78
5 678
D DDD
4 321
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±20
14
56
14
6.5
4.23
10
12.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1905-0200 Rev.2.00
Apr 06, 2010
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