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ROHM Semiconductor - Fast Recovery Diode

Numéro de référence RF601T2D
Description Fast Recovery Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RF601T2D fiche technique
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Fast recovery diode
RF601T2D
Applications
General rectification
Dimensions (Unit : mm)
Features
1) Cathode common type.(TO-220)
2) Ultra Low VF
3) Very fast recovery
4) Low switching loss
10.0±0.3
    0.1
 Structure
4.5±0.3
    0.1
2.8±0.2
    0.1
(1) (2) (3)
Construction
Silicon epitaxial planar
1.2
1.3
0.8
(1) (2) (3)
ROHM : TO220FN
① Manufacture Date
0.7±0.1
0.05
2.6±0.5
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
200
200
6
Forward current surge peak (60Hz/1cyc)
Junction temperature
IFSM
Tj
60
150
Storage temoerature
Tstg -55 to +150
(*1)Business frequency, Rating of R-load, Tc=132CMAX. 1/2 Io per diode
Unit
V
V
A
A
C
C
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol Min. Typ. Max.
VF - 0.87 0.93
IR - 0.01 10
trr - 18 25
Unit Conditions
V IF=3A
μA VR=200V
ns IF=0.5A,IR=1A,Irr=0.25*IR
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.C

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