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RF301B2S fiches techniques PDF

ROHM Semiconductor - Fast Recovery Diode

Numéro de référence RF301B2S
Description Fast Recovery Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RF301B2S fiche technique
Fast Recovery Diode
RF301B2S
zApplications
General rectification
zDimentions(Unit : mm)
zFeatures
1)Power mold type(CPD)
2)Ultra Low VF
3)Very fast recovery
4)Low switching loss
zConstruction
Silicon epitaxial planar
ROHM : CPD
JEITA : SC-63
Manufacture Date
zTaping specifications(Unit : mm)
www.DataSheet4U.com
zLand size figure(Unit : mm)
6.0
1.6 1.6
CPD
2.3 2.3
zStructure
(2)
(1) (3)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
VRM
VR
Io
Forward current surge peak (60Hz / 1cyc)(*1)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
(*1)Bussiness frequencies, Rating of R-load, Tc=128°C MAX.
Limits
200
200
3
40
150
-55 to +150
Unit
V
V
A
A
°C
°C
zElectrical characteristics(Ta=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal impedance
www.rohm.com
©2009 ROHM Co., Ltd. All rights reserved.
Symbol Min. Typ. Max.
VF - 0.87 0.93
IR - 10nA 10
trr - 14 25
θjc - - 6
Unit
V
µA
ns
°C/W
Conditions
IF=3A
VR=200V
IF=0.5A,IR=1A,Irr=0.25*IR
JUNCTION TO CASE
1/3 2009.11 - Rev.D

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