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Número de pieza | RF2001NS3D | |
Descripción | Fast Recovery Diodes | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RF2001NS3D (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Super Fast Recovery Diode
RF2001NS3D
Series
Standard Fast Recovery
Dimensions (Unit : mm)
Applications
General rectification
RF2001
NS3D
①
Data Sheet
Land size figure (Unit : mm)
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common dual type
Construction
Silicon epitaxial planer
Structure
ROHM : LPDS
JEITA : TO263S
① Manufacture Year, Week and Day
Taping dimensions (Unit : mm)
①②③
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
VRM
VR
Average rectified forward current
Io
Forward current surge peak
Junction temperature
Storage temperature
IFSM
Tj
Tstg
Conditions
Duty≤0.5
Direct voltage
60Hz half sin wave resistive load ,
Tc=90°C
1/2 Io per diode
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Limits
350
300
20
100
150
55 to 150
Unit
V
V
A
A
C
C
Electrical characteristics (Tj=25C, per diode)
Parameter
Symbol
Conditions
Forward voltage
Reverse current
Reverse recovery time
VF IF=10A
IR VR=300V
trr IF=0.5A,IR=1A,Irr=0.25×IR
Thermal resistance
Rth(j-c)
junction to case
Min.
-
-
-
-
Typ. Max.
1.2 1.3
0.03 10
17 25
-2
Unit
V
μA
ns
°C/W
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
1 page Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet RF2001NS3D.PDF ] |
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