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ROHM Semiconductor - Fast Recovery Diodes

Numéro de référence RF1501NS3S
Description Fast Recovery Diodes
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RF1501NS3S fiche technique
RF1501NS3S | Fast Recovery Diodes | Discrete Semiconductors | ROHM CO., LTD.
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Fast Recovery Diodes
RF1501NS3S
[ Product description ]
ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for
significant efficiency increase of switching power supply as well as reduction of
switching loss.
Features
EPower mold type.
EUltra-low Reverse recovery energy.
Product specifications
Absolute maximum ratings (Ta=25ºC)
Rated parameters
Standard value Conditions
Repetitive peak reverse voltage VRM(V)
350
Reverse voltage(DC) VR(V)
300
Forward current IF
-
Average rectified forward current IO(A)
20
Forward current surge peak IFSM(A)
100 60Hz/1cyc
Junction temperature Tj(ºC)
150
Storage temperature Tstg(ºC)
-55 to +150
Outline
10.1x9.0(t=4.5)
Dimensions
Equivalent circuit diagram
Copyright © 1997-2010 ROHM CO.,LTD.
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
http://www.rohm.com/products/discrete/diode/fast_recovery/rf1501ns3s/print.html
6/17/2010

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