(PDF) RB751CS-40 Datasheet - Schottky barrier diode

Número de pieza	RB751CS-40
Descripción	Schottky barrier diode
Fabricantes	ROHM Semiconductor
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No Preview Available ! Data Sheet Schottky barrier diode RB751CS-40 Applications Low current rectification Dimensions (Unit : mm) Features 1) Ultra Small mold type(VMN2) 2) Low VF 3) High reliability 0 .6±0.05 0.16±0.05 Land size figure (Unit : mm) Structure Silicon epitaxial planer 0.156 0.35±0.1 0.37±0.03 ROHM : VMN2 dot (year week factory)+day Structure Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak(60Hz/1cyc) Junction temperature IFSM Tj Storage temperature Tstg Limits 40 30 30 200 125 40 to 125 Unit V V mA mA °C °C Electrical characteristic (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current Capacitance between terminals VF - 0.37 IR - 0.5 Ct - 2 - Unit Conditions V IF=1mA μA VR=30V pF VR=1V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.A 1 page

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PDF RB751CS-40 Data sheet ( Hoja de datos )