DataSheetWiki


RB521ZS8A30 fiches techniques PDF

ROHM Semiconductor - Schottky barrier diode

Numéro de référence RB521ZS8A30
Description Schottky barrier diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





RB521ZS8A30 fiche technique
RB521ZS8A30 | Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD.
Page 1 of 1
www.DataSheet4U.com
Schottky Barrier Diodes
RB521ZS8A30
[ Product description ]
ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant,
suitable for PC,mobile phone and various portable electronics.
Features
EUltra-small mold type.
EMulti-diodes package.
Product specifications
Absolute maximum ratings (Ta=25ºC)
Rated parameters
Standard value Conditions
Repetitive peak reverse voltage VRM(V)
30
Reverse voltage(DC) VR(V)
30
Average rectified forward current IO(A)
0.1
Forward current surge peak IFSM(A)
0.5 60Hz/1cyc
Junction temperature Tj(ºC)
150
Storage temperature Tstg(ºC)
-55 to +150
Outline
1.6x0.8(t=0.3)
Dimensions
Equivalent circuit diagram
Copyright © 1997-2010 ROHM CO.,LTD.
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
http://www.rohm.com/products/discrete/diode/schottky_barrier/rb521zs8a30/print.html
6/17/2010

PagesPages 1
Télécharger [ RB521ZS8A30 ]


Fiche technique recommandé

No Description détaillée Fabricant
RB521ZS8A30 Schottky barrier diode ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche