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Número de pieza | IRFH5015PBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFH5015PBF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
150
31
33
1.7
ID
(@Tc(Bottom) = 25°C)
56
Applications
• Primary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
V
mΩ
nC
Ω
A
Features and Benefits
Features
Low RDSon (< 31 mΩ)
Low Thermal Resistance to PCB (<0.5°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
www.DaPtaDShe-e9t47U4.co4m6
IRFH5015PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5015TRPBF
IRFH5015TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through
are on page 8
www.irf.com
Max.
150
± 20
10
8.2
56
36
220
3.6
250
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
01/22/2010
1 page 100
90 ID = 34A
80
70
60 TJ = 125°C
50
40
30 TJ = 25°C
20
10
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRFH5015PbFwww.DataSheet4U.com
1000
900
800
700
ID
TOP 3.7A
7.9A
BOTTOM 34A
600
500
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
www.irf.com
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFH5015PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFH5015PBF | HEXFET Power MOSFET | International Rectifier |
IRFH5015PBF | HEXFET Power MOSFET | International Rectifier |
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