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PDF BA6506F Data sheet ( Hoja de datos )
| Número de pieza | BA6506F | |
| Descripción | 2-Phase Half-Wave Pre Driver | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Datasheet
DC Brushless Motor Drivers for Cooling Fans
Two-Phase Half-Wave Pre Driver
Fan Motor Driver
BA6506F
General description
BA6506F is two-phase half-wave fan motor pre-driver.
This driver incorporates lock protection, automatic restart
circuit and Rotation speed pulse signal (FG) output.
Package
SOP8
W (Typ.) x D (Typ.) x H (Max.)
5.00mm x 6.20mm x 1.71mm
Features
Pre-driver
Incorporates lock protection and automatic restart
circuit
Rotation speed pulse signal (FG) output
SOP8
Application
For desktop PC, server, general consumer equipment, communication equipment and industrial equipment.
Absolute maximum ratings
Parameter
Symbol
Limit
Supply voltage
Power dissipation
Vcc 30
Pd 624 *1
Operating temperature range
Topr –40 to +100
Storage temperature range
Tstg –55 to +125
Output current
Iomax
70
Rotation speed pulse signal (FG) output voltage
IFG
8
Rotation speed pulse signal (FG) output current
VFG
30
Junction temperature
Tjmax
125
*1 Reduce by 6.24mW/°C over Ta=25°C. (On 70.0mm×70.0mm×1.6mm glass epoxy board)
Unit
V
mW
°C
°C
mA
mA
V
°C
Recommended operating conditions
Parameter
Operating supply voltage range
Hall input voltage range
Symbol
Vcc
VH
Limit
4.0 to 28.0
1.0 Vcc-0.5
Unit
V
V
Product structure Silicon monolithic integrated circuit
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 14 001
This product is not designed protection against radioactive rays
1/12
TSZ02201-0H1H0B100490-1-2
18.DEC.2012 Rev.002
1 page  
BA6506F
Typical performance curves(Reference data)
5. 0
4. 0
3. 0
2. 0
1. 0
0. 0
0
Operating range
-40
25 VLDCL
100
-40
25 VLDCP
100
6 12 18 24
Supply voltage, Vcc [V]
30
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
0
Fig.7 Clamp-comparison voltage
of capacitor for lock detection
100
25
-40
20 40 60
Output current, Io [mA]
Fig.8 Output H voltage
80
Product structure Silicon monolithic integrated circuit
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 14 001
This product is not designed protection against radioactive rays
5/12
TSZ02201-0H1H0B100490-1-2
18.DEC.2012 Rev.002
5 Page 
BA6506F
Operational Notes
1) Absolute maximum ratings
An excess in the absolute maximum rations, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open
circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection
devices, such as fuses.
2) Connecting the power supply connector backward
Connecting of the power supply in reverse polarity can damage IC. Take precautions when connecting the power
supply lines. An external direction diode can be added
3) Power supply line
Back electromotive force causes regenerated current to power supply line, therefore take a measure such as placing a
capacitor between power supply and GND for routing regenerated current. And fully ensure that the capacitor
characteristics have no problem before determine a capacitor value. (when applying electrolytic capacitors,
capacitance characteristic values are reduced at low temperatures)
4) GND potential
The potential of GND pin must be minimum potential in all operating conditions. Also ensure that all terminals except
GND terminal do not fall below GND voltage including transient characteristics. However, it is possible that the motor
output terminal may deflect below GND because of influence by back electromotive force of motor. Malfunction may
possibly occur depending on use condition, environment, and property of individual motor. Please make fully
confirmation that no problem is found on operation of IC.
5) Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation(Pd) in actual operating
conditions
6) Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together
7) Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction
8) ASO
When using the IC, set the output transistor so that it does not exceed absolute maximum rations or ASO
9) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to
stress. Always discharge capacitors after each process or step. Always turn the IC’s power supply off before
connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps
as an antistatic measure. Use similar precaution when transporting or storing the IC
10) GND wiring pattern
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to
change the GND wiring pattern of any external components, either
11) Capacitor between output and GND
When a large capacitor is connected between output and GND, if Vcc is shorted with 0V or GND for some cause, it is
possible that the current charged in the capacitor may flow into the output resulting in destruction. Keep the capacitor
between output and GND below 100uF
12) IC terminal input
When Vcc voltage is not applied to IC, do not apply voltage to each input terminal. When voltage above Vcc or below
GND is applied to the input terminal, parasitic element is actuated due to the structure of IC. Operation of parasitic
element causes mutual interference between circuits, resulting in malfunction as well as destruction in the last. Do not
use in a manner where parasitic element is actuated
Product structure Silicon monolithic integrated circuit
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 14 001
This product is not designed protection against radioactive rays
11/12
TSZ02201-0H1H0B100490-1-2
18.DEC.2012 Rev.002
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet BA6506F.PDF ] | |
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