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Número de pieza | 2SK4151 | |
Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK4151 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
1 page 2SK4151
Main Characteristics
Maximum Safe Operation Area
10
1
0.1
0.01
PW 10 μs
= 100 μs
Operation in this
area is limited by
RDS(on)
Ta = 25°C
1 shot
0.001
0.1 1
10 100 500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
VDS = 10 V
Pulse Test
4
3
Tc = −25°C
25°C
75°C
2
1
0
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical) (1)
5
VGS = 4 V
Pulse Test
4
3 ID = 1 A 0.5 A
2
0.2 A
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1901-0100 Rev.1.00 Mar 15, 2010
Page 3 of 6
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Typical Output Characteristics
2.5
Ta = 25°C
Pulse Test
2.0
3V
4V
1.5
2.5 V
2V
1.0
0.5 VGS = 1.5 V
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
Ta = 25°C
Pulse Test
VGS = 2.5 V
4V
1
0.1
0.1
1
Drain Current ID (A)
10
Static Drain to Source on State Resistance
vs. Temperature (Typical) (2)
5
VGS = 2.5 V
Pulse Test
4
0.5 A
ID = 1 A
3
2 0.2 A
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 2SK4151.PDF ] |
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