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Numéro de référence | TJ120F06J3 | ||
Description | DC-DC Converter Applications Motor Drive Applications | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
TJ120F06J3
Chopper Regulator, DC-DC Converter Applications
Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 110 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −60 V)
• Enhancement-model: Vth = −1.5 to −3.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature (Note 4)
Storage temperature range (Note 4)
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
−60
−60
±20
−120
−360
300
608
−120
30
175
−55 to 175
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
10.0 ± 0.3
9.5 ± 0.2
Unit: mm
0.4 ± 0.1
1.1
0.76 ± 0.1
1.4 ± 0.1
2.54 ± 0.25
2.35 ± 0.1
2.34 ± 0.25
123
0.4 ± 0.1
1. GATE
2. DRAIN
(HEAT SINK)
3. SOURSE
8.0
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-10W1A
Weight: 1.07 g (typ.)
2
Thermal Characteristics
1
Characteristics
Thermal resistance, channel to case
Symbol
Rth (ch-c)
Max
0.5
Unit
°C/W
3
Note 1: Please use devises on condition that the channel temperature is below 175°C.
Note 2: VDD = −25 V, Tch = 25°C (Initial), L = 57 μH, RG = 25 Ω, IAR = −120 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Note 4: The definitions of the absolute maximum channel temperature and storage temperatures are based on
AEC-Q101.
Note 5:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution
1 2009-04-17
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Pages | Pages 7 | ||
Télécharger | [ TJ120F06J3 ] |
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