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PDF BD9641NUV Data sheet ( Hoja de datos )
| Número de pieza | BD9641NUV | |
| Descripción | High-efficiency Step-up Switching Regulator | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Single-chip Type with Built-in FET Switching Regulator Series
High-efficiency Step-up
Switching Regulator
with Built-in Power MOSFET
BD9641NUV
No.09027EAT27
●Description
BD9641NUV is synchronous rectification 1ch boost Switching converter built in Power MOS FET. Input voltage is 2.5V～5.5V.
Low power consumption can be achieved. And, because Back-gate control function is built-in, the load can be isolated from
the input without external FET in shutdown mode.
●Features
1) PWM synchronous rectification method
2) Input voltage is 2.5V～5.5V
3) Switching frequency is 900kHz.
4) Built in under voltage lockout function
5) Built in protection circuit(short-circuit protection,Thermal shutdown)
6) Built in back gate control function
7) Output voltage can be set by external resistance.
8) Built in power MOS FET transistor
9) Built in soft start function
10) VSON010V3030 package
●Application
・ For DSC/DVC motor
・ For cellular phone
・ For application using lithium cell
●Absolute maximum rating(Ta=25[℃])
Item Symbol
Power-supply voltage
VBAT
Power Dissipation
Pd
Operating temperature range
Topt
Storage temperature range
Tstg
SW terminal current
Isw
Terminal allowable voltage
Junction temperature
VIN
Tjmax
※1 Derating in done 5.6[mW/℃] for operating above Ta=25 [℃].
(Mount on 1-layer 70.0[mm]×70.0[mm]×1.6[mm] board.)
※2 Do not exceed Pd.
Rating
-0.3～7
700※1
-20～+70
-55～+150
1.8※2
-0.3～7
+150
Unit
V
mW
℃
℃
A
V
℃
●Operationg condition (Ta= -20～+70[℃])
Item
Symbol
Min
Limits
Typ
Max
Power-supply voltage
VBAT 2.5 3.7 5.5
Output voltage setting range
VOUT
2.8
5
5.5
Unit
V
V
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
1/12
2009.05 - Rev.A
1 page  
BD9641NUV
●Description of input / output terminal
Terminal
Terminal
No. Name
1 VBAT
Equivalent Circuit
VBAT
FB
*1
GND
VBAT
2
XSHDN
XSHDN
400[kΩ]
GND
VBAT
6 FB
FB
GND
7,8
GND
PGND
GND
PGND
9 SW
VOUT
SW
*1
PGND
Technical Note
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Function
Power input terminal
*1 Clamp for protecting from E.S.D
TTL level input terminal
*1 Clamp for protecting from E.S.D
Analog input terminal
GND terminal
Power MOS driver for synchronous rectification
*1 Clamp for protecting from E.S.D
10 VOUT
VOUT
PGND
DC/DC output terminal
*1 Clamp for protecting from E.S.D
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
5/12
2009.05 - Rev.A
5 Page 
BD9641NUV
●Power Dissipation
Technical Note
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Fig.20 Permissible Dissipation
5.5V
Icc
VBAT
VOUT
RP
SW
RN
PGND
Iout=600mA
Iin
Fig.21 About calculation of permissible dissipation
・Example of calculate of power dissipation
(Input voltage=2.5[V], Output voltage=5.5[V], Output current=400[mA])
・The loss of Power Tr : Pd(DC)
(Rp:PMOS ON resistance RN:NMOS ON resistance D:Switching duty of SW terminal η:Efficiency)
Pd(DC) = (Rp × (1 - D) + Rn × D) × Iin2 × 1 - η
η
=
{Rp
×
(1 -
D)
+
Rn
×
D}
×
(Iout
×
Vout
/
Vin) 2
×
1- η
η
= {0.65 × (1 - 0.7) + 0.6 × 0.7} × (0.4 × 5.5/ 2.5)2 × 1 - 0.7
0.7
= 0.615 × 0.7744 × 1 - 0.7 = 0.204(W)
0.7
・The loss of internal consumed power of IC : Pd(Icc)
Pd(Icc)=Vcc×Icc (Vcc：power supply voltage Icc：Consuming current)
=5.5×0.001=0.0055
Therefore, the power dissipation caused in IC : Pd=Pd(DC)+Pd(Icc)=0.210(W)
Please examine the design of circuit not to exceed the power dissipation described.
(*) Please connect surely the bare pad of reverse package to the board to use solder.
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
11/12
2009.05 - Rev.A
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BD9641NUV.PDF ] | |
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