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PDF GA500TD60U Data sheet ( Hoja de datos )
| Número de pieza | GA500TD60U | |
| Descripción | HALF-BRIDGE IGBT DUAL INT-A-PAK | |
| Fabricantes | International Rectifier | |
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"HALF-BRIDGE" IGBT DUAL INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50048D
GA500TD60U
Ultra-FastTM Speed IGBT
VCES = 600V
VCE(on) typ. = 1.9V
@VGE = 15V, IC = 500A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector CurrentQ
Peak Switching CurrentR
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
500
1000
1000
500
±20
2500
1550
800
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink S
Mounting Torque, Case-to-Terminal 1, 2 & 3 S
Weight of Module
Typ.
—
—
0.1
—
—
400
Max.
0.08
0.20
—
6.0
5.0
—
Units
°C/W
N.m
g
1
05/15/02
1 page  
www.DataSheet4U.com
100000
80000
60000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
40000
20000
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA500TD60U
20
VCC = 400V
I C = 500A
16
12
8
4
0
0 400 800 1200 1600 2000 2400
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
200 VCC = 360V
VGE = 15V
180
TJ
IC
= 125 ° C
= 520500AA
160
140
120
100
80
0
10 20 30 40
RG , Gate Resistance (O(hmΩ))
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1000 RGG1=1=5OΩh;RmG2 = 0 Ω
VGE = 15V
VCC = 360V
ICIC == 550000AA
100
IC = 250 A
IC = 125 A
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| PDF Descargar | [ Datasheet GA500TD60U.PDF ] | |
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