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Número de pieza | IRFBA90N20DPBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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SMPS MOSFET
PD - 95902
Applications
l High frequency DC-DC converters
l Lead-Free
IRFBA90N20DPbF
HEXFET® Power MOSFET
VDSS
200V
RDS(on) max
0.023Ω
ID
98A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Super-220™
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended Clip Force
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
98
71
390
650
4.3
± 30
6.3
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
V/ns
°C
N
Typ.
–––
0.50
–––
Max.
0.23
–––
58
Units
°C/W
Notes through are on page 8
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09/15/04
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100
LIMITED BY PACKAGE
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature
( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
IRFBA90N20DPbF
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRFBA90N20DPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFBA90N20DPBF | Power MOSFET ( Transistor ) | International Rectifier |
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