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ZXMS6001N3 fiches techniques PDF

Zetex Semiconductors - 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET

Numéro de référence ZXMS6001N3
Description 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET
Fabricant Zetex Semiconductors 
Logo Zetex Semiconductors 





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ZXMS6001N3 fiche technique
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ZXMS6001N3
60V N-channel self protected enhancement mode
INTELLIFETTM MOSFET
Summary
Continuous drain source voltage VDS = 60V
On-state resistance
675m
Max nominal load current (a)
Min nominal load current (c)
Clamping Energy
1.1A (VIN = 5V)
0.7A (VIN = 5V)
550mJ
Description
Low input current self protected low side MOSFET intended for Vin=5V
applications. Monolithic over temperature, over current, over voltage
(active clamp) and ESD protected logic level functionality. Intended as
a general purpose switch.
Note:
The tab is connected to the source pin and must be electrically isolated
from the drain pin. Connection of significant copper to the drain pin is
recommended for best thermal performance.
S
S
D
Features
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input protection (ESD)
• Load dump protection (actively protects load)
• Low input current
Ordering information
Device
Package Part mark
ZXMS6001N3TA SOT223 ZXMS6001
Reel size
(inches)
7
SOT223
IN
Tape width
(mm)
12 embossed
Quantity
per reel
1,000
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com

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