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Numéro de référence | BFU610F | ||
Description | NPN Wideband Silicon Germanium RF Transistor | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
BFU610F
www.DataSheet4U.com
NPN wideband silicon germanium RF transistor
Rev. 01 — 17 June 2010
Objective data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
1.2 Features and benefits
40 GHz fT silicon germanium
technology
High associated gain 12 dB at 12 GHz
Low noise high gain microwave
transistor
Noise figure (NF) = 1.4 dB at 5.8 GHz
1.3 Applications
2nd LNA stage and mixer stage in
DBS LNB’s
Analog/digital cordless applications
Ka band oscillators DRO’s
Low noise amplifiers for microwave
communications systems
Satellite radio
WLAN and CDMA applications
1.4 Quick reference data
Table 1.
Symbol
CCBS
fT
Gp(max)
hFE
IC
Ptot
VCBO
VCEO
VEBO
Quick reference data
Parameter
Conditions
collector-base
capacitance
transition frequency
maximum power gain
DC current gain
collector current
VCB = 2 V; f = 1 MHz;
VBE = [tbd] V
VCE = 2 V; IC = 25 mA;
f = 2 GHz; Tamb = 25 °C
f = 5.8 GHz; IC = 8 mA;
VCE = 2 V; Tamb = 25 °C
VCE = 2 V; IC = 10 mA;
Tj = 25 °C
total power dissipation Tsp ≤ 90 °C; see Figure 1
collector-base voltage IE = 0 A
collector-emitter
voltage
IB = 0 A
emitter-base voltage IC = 0 A
Min Typ Max Unit
- 70 - fF
- 40 - GHz
[1] -
21 -
dB
70 140 270
- - 10 mA
[2] - - 50 mW
- - 10 V
- - 5V
- - 0.55 V
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
[2] Tsp is the temperature at the solder point of the emitter lead.
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Pages | Pages 12 | ||
Télécharger | [ BFU610F ] |
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