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NXP Semiconductors - NPN Wideband Silicon Germanium RF Transistor

Numéro de référence BFU610F
Description NPN Wideband Silicon Germanium RF Transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BFU610F fiche technique
BFU610F
www.DataSheet4U.com
NPN wideband silicon germanium RF transistor
Rev. 01 — 17 June 2010
Objective data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
1.2 Features and benefits
„ 40 GHz fT silicon germanium
technology
„ High associated gain 12 dB at 12 GHz
„ Low noise high gain microwave
transistor
„ Noise figure (NF) = 1.4 dB at 5.8 GHz
1.3 Applications
„ 2nd LNA stage and mixer stage in
DBS LNB’s
„ Analog/digital cordless applications
„ Ka band oscillators DRO’s
„ Low noise amplifiers for microwave
communications systems
„ Satellite radio
„ WLAN and CDMA applications
1.4 Quick reference data
Table 1.
Symbol
CCBS
fT
Gp(max)
hFE
IC
Ptot
VCBO
VCEO
VEBO
Quick reference data
Parameter
Conditions
collector-base
capacitance
transition frequency
maximum power gain
DC current gain
collector current
VCB = 2 V; f = 1 MHz;
VBE = [tbd] V
VCE = 2 V; IC = 25 mA;
f = 2 GHz; Tamb = 25 °C
f = 5.8 GHz; IC = 8 mA;
VCE = 2 V; Tamb = 25 °C
VCE = 2 V; IC = 10 mA;
Tj = 25 °C
total power dissipation Tsp 90 °C; see Figure 1
collector-base voltage IE = 0 A
collector-emitter
voltage
IB = 0 A
emitter-base voltage IC = 0 A
Min Typ Max Unit
- 70 - fF
- 40 - GHz
[1] -
21 -
dB
70 140 270
- - 10 mA
[2] - - 50 mW
- - 10 V
- - 5V
- - 0.55 V
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
[2] Tsp is the temperature at the solder point of the emitter lead.

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