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PDF PBSS8510PA Data sheet ( Hoja de datos )
| Número de pieza | PBSS8510PA | |
| Descripción | 5.2A NPN Low V_CEsat (BISS) Transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS8510PA
100 V, 5.2 A NPN low VCEsat (BISS) transistor
Rev. 1 — 17 May 2010
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS9410PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = 5.2 A;
IB = 260 mA
Min Typ Max Unit
- - 100 V
- - 5.2 A
- - 6A
[1] -
48 65 mΩ
1 page  
NXP Semiconductors
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PBSS8510PA
100 V, 5.2 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02 0.01
0
006aab981
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02 0.01
1
0
006aab982
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS8510PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 May 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
11. Soldering
1.05
2.3 0.6 0.55
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PBSS8510PA
100 V, 5.2 A NPN low VCEsat (BISS) transistor
2.1
1.3
0.5 (2×)
0.4 (2×)
0.5 (2×) 0.6 (2×)
0.25
1.1
1.2
0.25 0.25
0.4
0.5
1.6
solder paste = solder lands
1.7
solder resist
occupied area
Dimensions in mm
sot1061_fr
Reflow soldering is the only recommended soldering method.
Fig 17. Reflow soldering footprint SOT1061 (HUSON3)
PBSS8510PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 May 2010
© NXP B.V. 2010. All rights reserved.
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