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Numéro de référence | IRFH5015PBF | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
150
31
33
1.7
ID
(@Tc(Bottom) = 25°C)
56
Applications
• Primary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
V
mΩ
nC
Ω
A
Features and Benefits
Features
Low RDSon (< 31 mΩ)
Low Thermal Resistance to PCB (<0.5°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
www.DaPtaDShe-e9t47U4.co4m6
IRFH5015PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5015TRPBF
IRFH5015TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through
are on page 8
www.irf.com
Max.
150
± 20
10
8.2
56
36
220
3.6
250
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
01/22/2010
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Pages | Pages 8 | ||
Télécharger | [ IRFH5015PBF ] |
No | Description détaillée | Fabricant |
IRFH5015PBF | HEXFET Power MOSFET | International Rectifier |
IRFH5015PBF | HEXFET Power MOSFET | International Rectifier |
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