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PDF IRFH5006PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH5006PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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IRFH5006PbF
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tmb = 25°C)
60
4.1
69
1.2
h100
V
mΩ
nC
Ω
A
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Low RDSon (≤ 4.1mΩ)
Low Thermal Resistance to PCB (≤ 0.8°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
results in
⇒
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH5006PBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable part number
IRFH5006TRPBF
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ Tmb = 25°C
ID @ Tmb = 100°C
IDM
PD @TA = 25°C
PD @ Tmb = 25°C
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
60
±20
21
17
100h
100h
400
3.6
156
0.029
-55 to + 150
Notes through are on page 9
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
May 19, 2015
1 page  
IRFH5006PbF
10
ID = 50A
9
8
7 TJ = 125°C
6
5
4 TJ = 25°C
3
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
1000
100
10
1200
1000
800
ID
TOP 7.9A
14A
BOTTOM 50A
600
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Δ Tj = 125°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Typical Avalanche Current vs. Pulsewidth
1.0E-01
5 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFH5006PBF.PDF ] | |
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