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PDF 3N80 Data sheet ( Hoja de datos )
| Número de pieza | 3N80 | |
| Descripción | 800 Volts N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3N80 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
3N80
Preliminary
2.5 Amps, 800 Volts
N-CHANNEL POWER MOSFET
www.DataSheet4U.com
Power MOSFET
DESCRIPTION
The UTC 3N80 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON)=3.8Ω @VGS=10 V
* Ultra low gate charge ( typical 19 nC )
* Low reverse transfer capacitance ( CRSS = typical 11 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
Lead-free: 3N80L
Halogen-free: 3N80G
3.Gate
1.Source
ORDERING INFORMATION
Normal
3N80-TA3-T
3N80-TF3-T
Ordering Number
Lead Free
3N80L-TA3-T
3N80L-TF3-T
Halogen Free
3N80G-TA3-T
3N80G-TF3-T
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-283,a
1 page  
3N80
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
www.DataSheet4U.com
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
10V
RD
tp
L
VDS
BVDSS
IAS
VDD
D.U.T.
VDD
ID(t)
tp
VDS(t)
Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-283.a
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 3N80.PDF ] | |
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