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PDF DMG4712SSS Data sheet ( Hoja de datos )
| Número de pieza | DMG4712SSS | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DMG4712SSS (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
• High Density UMOS with Schottky Barrier Diode
• Low Leakage Current at High Temperature
• High Conversion Efficiency
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Utilizes Diodes’ Monolithic SiMFET Technology to Increase
Conversion Efficiency
• UIS Tested, RG Tested
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.072 grams (approximate)
SiMFET
Schottky integrated MOSFET
Top View
SD
SD
SD
GD
Top View
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
IDM
IAR
EAR
Value
30
±12
11.2
6.6
63
30
45
Unit
V
V
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.55
81.3
-55 to +150
Unit
W
°C/W
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1in * 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C. L = 0.1mH, VDD = 0V, RG = Ω0, rated VDS = 30V, and VGS = 10V.
DMG4712SSS
Document number: DS32040 Rev. 5 - 2
1 of 6
www.diodes.com
June 2010
© Diodes Incorporated
1 page  
Ordering Information (Note 8)
Notes:
Part Number
DMG4712SSS-13
Case
SO-8
8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
wwDwM.DaGtaS4he7et14U2.cSomSS
Packaging
2500 / Tape & Reel
Marking Information
8
G4712SS
YY WW
5
14
Logo
Part no.
Xth week: 51 ~ 53
Year: “08” = 2008
“09” = 2009
Package Outline Dimensions
e
D
b
E1 E
A1
L
Detail ‘A’
Gauge Plane
Seating Plane
A2 A A3
h
45°
7°~9°
Detail ‘A’
SO-8
Dim Min Max
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
θ 0° 8°
All Dimensions in mm
Suggested Pad Layout
X
C2
Y
C1
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
DMG4712SSS
Document number: DS32040 Rev. 5 - 2
5 of 6
www.diodes.com
June 2010
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DMG4712SSS.PDF ] | |
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