|
|
PDF EID1616-3 Data sheet ( Hoja de datos )
| Número de pieza | EID1616-3 | |
| Descripción | 16.2-16.5 GHz 3-Watt Internally-Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EID1616-3 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
UPDATED: 07/24/2008
www.DataSheet4U.com
EID1616-3
16.2–16.5 GHz 3-Watt Internally-Matched Power FET
FEATURES
• 16.2-16.5 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +35.0 dBm Output Power at 1dB Compression
• 6.0 dB Power Gain at 1dB Compression
• 25% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.060 MIN.
.650±.008 .512
GATE
Excelics
EID1616-3
YYWW
.060 MIN.
DRAIN
.022
.319
SN
.094
.382
.045
.004 .070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
∆G
PAE
Id1dB
IDSS
VP
RTH
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 16.2-16.5GHz
VDS = 10 V, IDSQ ≈ 1200mA
Gain at 1dB Compression
f = 16.2-16.5GHz
VDS = 10 V, IDSQ ≈ 1200mA
Gain Flatness
f = 16.2-16.5GHz
VDS = 10 V, IDSQ ≈ 1200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1200mA
f = 16.2-16.5GHz
Drain Current at 1dB Compression
f = 16.2-16.5GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance2
VDS = 3 V, VGS = 0 V
VDS = 3 V, IDS = 20 mA
Caution! ESD sensitive device.
MIN
34.5
TYP
35.0
MAX
UNITS
dBm
5.0 6.0
dB
±0.6 dB
25 %
700
1100
-2.5
8.5
900
1500
-4.0
10.5
mA
mA
V
oC/W
Notes: 1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
VDS
VGS
IDS
IGSF
PIN
PT
TCH
TSTG
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
VALUE
10 V
-4.5 V
IDSS
20 mA
@ 3dB compression
11.5 W
150°C
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2008
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EID1616-3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EID1616-3 | 16.2-16.5 GHz 3-Watt Internally-Matched Power FET | Excelics Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |