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Número de pieza | EID1416A1-8 | |
Descripción | 14.0-16.0 GHz 8-Watt Internally-Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EID1416A1-8 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! UPDATED 09/20/2007
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EID1416A1-8
14.0-16.0GHz 8-Watt Internally-Matched Power FET
FEATURES
• 14.0-16.0GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +39.5 dBm Output Power at 1dB Compression
• 6.0 dB Power Gain at 1dB Compression
• 27% Power Added Efficiency
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
P1dB
G1dB
∆G
PAE
Id1dB
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 14.0-16.0GHz
VDS = 10V, IDSQ ≈ 2200mA
Gain at 1dB Compression
f = 14.0-16.0GHz
VDS = 10V, IDSQ ≈ 2200mA
Gain Flatness
f = 14.0-16.0GHz
VDS = 10V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10V, IDSQ ≈ 2200mA
f = 14.0-16.0GHz
Drain Current at 1dB Compression f = 14.0-16.0GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 40 mA
RTH Thermal Resistance2
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
38.5
5.0
TYP
39.5
6.0
27
2800
4200
-1.2
3.5
MAX
UNITS
dBm
dB
±0.6
dB
3600
5760
-2.5
4.0
%
mA
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
96mA
Igr Reverse Gate Current -19.2mA
Pin Input Power 38.5dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
38W
CONTINUOUS2
10V
-4V
28.8mA
-4.8mA
@ 3dB Compression
175C
-65C to +175C
38W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised October 2007
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EID1416A1-8.PDF ] |
Número de pieza | Descripción | Fabricantes |
EID1416A1-8 | 14.0-16.0 GHz 8-Watt Internally-Matched Power FET | Excelics Semiconductor |
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