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PDF EID1415A1-5 Data sheet ( Hoja de datos )
| Número de pieza | EID1415A1-5 | |
| Descripción | 14.40-15.35 GHz 5-Watt Internally-Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
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www.DataSheet4U.com
UPDATED 07/12/2007
EID1415A1-5
14.40-15.35 GHz 5-Watt Internally-Matched Power FET
FEATURES
• 14.40-15.35 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +37.5 dBm Output Power at 1dB Compression
• 7.5 dB Power Gain at 1dB Compression
• 35% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1415A1-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
∆G
PAE
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 1200mA
Gain at 1dB Compression
f = 14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 1200mA
Gain Flatness
f = 14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 1200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1200mA
f = 14.40-15.35GHz
Id1dB
Drain Current at 1dB Compression f = 14.40-15.35GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 20 mA
MIN
37.0
6.5
TYP
37.5
7.5
35
1400
2080
-2.5
4.5
MAX
UNITS
dBm
dB
±0.6 dB
%
1800 mA
2880 mA
-4.0 V
5.5 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet EID1415A1-5.PDF ] | |
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| EID1415A1-8 | 14.40-15.35 GHz 8-Watt Internally-Matched Power FET | Excelics Semiconductor |
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