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Excelics Semiconductor - 14.00-14.50 GHz 5-Watt Internally-Matched Power FET

Numéro de référence EID1414A1-5
Description 14.00-14.50 GHz 5-Watt Internally-Matched Power FET
Fabricant Excelics Semiconductor 
Logo Excelics Semiconductor 





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EID1414A1-5 fiche technique
www.DataSheet4U.com
UPDATED 07/12/2007
EID1414A1-5
14.00-14.50 GHz 5-Watt Internally-Matched Power FET
FEATURES
14.00-14.50 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1414A1-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 14.00-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain at 1dB Compression
f = 14.00-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain Flatness
f = 14.00-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ = 1200mA
f = 14.00-14.50GHz
Id1dB
Drain Current at 1dB Compression f = 14.00-14.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 20 mA
MIN
37.0
6.5
TYP
37.5
7.5
35
1400
2080
-2.5
5.5
MAX
UNITS
dBm
dB
±0.6 dB
%
1800 mA
2880 mA
-4.0 V
6.0 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised July 2007

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