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PDF EID1314A1-8 Data sheet ( Hoja de datos )
| Número de pieza | EID1314A1-8 | |
| Descripción | 13.75-14.50 GHz 8-Watt Internally-Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
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UPDATED 07/12/2007
www.DataSheet4U.com
EID1314A1-8
13.75-14.50 GHz 8-Watt Internally-Matched Power FET
FEATURES
• 13.75-14.50 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +39.5 dBm Output Power at 1dB Compression
• 6.5 dB Power Gain at 1dB Compression
• 27% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1314A1-8 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
∆G
PAE
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 2200mA
f = 13.75-14.50GHz
Id1dB
Drain Current at 1dB Compression f = 13.75-14.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 40 mA
RTH Thermal Resistance2
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
MIN
38.5
5.5
TYP
39.5
6.5
27
2800
4200
-1.2
3.5
MAX
UNITS
dBm
dB
±0.6 dB
%
3600 mA
5760 mA
-2.5 V
4.0 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet EID1314A1-8.PDF ] | |
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