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PDF TBN4227 Data sheet ( Hoja de datos )
| Número de pieza | TBN4227 | |
| Descripción | Si NPN Transistor | |
| Fabricantes | AUK | |
| Logotipo |  |
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Semiconductor
www.DataSheet4U.com
TBN4227 Series
Si NPN Transistor
□ Applications
- VHF and UHF low noise amplifier
- Wide band amplifier
□ Features
- High gain bandwidth product
fT = 8 GHz at VCE = 3 V, IC = 7 mA
fT = 9 GHz at VCE = 3 V, IC = 20 mA
- High power gain
|S21|2 = 11.4 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz
- Low noise figure
NF = 1.2 dB at VCE = 3 V, IC = 3 mA, f = 1 GHz
□ Absolute Maximum Ratings (TA = 25 ℃)
Param eter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Sym bol
BVCBO
BVCEO
BVEBO
IC
Ptot
Tj
Tstg
Caution : Electro Static Discharge sensitive device
SOT-323
Unit in mm
2.1±0.1
1.25±0.05
1
3
2
0.1 Min.
Pin Configuration
1. Base
2. Emitter
3. Collector
Ratings
20
8
3
65
150
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
1
1 page  
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TBN4227 Series
Maximum Available Gain
vs. Collector Current
20
18 VCE = 3 V
f = 1GHz
16
14
12
10
8
6
4
2
0
1 10
Collector Current, IC (mA)
50
Noise Figure
vs. Collector Current
5
VCE = 3 V
4 f = 1 GHz
3
2
1
0
0.5 1
10
Collector Current, IC (mA)
50
Noise Parameter vs. Frequency
(at VCE = 3 V, IC = 3 mA)
Frequency
(GHz)
Fmin (dB)
0.9 1.193
1 1.147
1.5 1.302
1.8 1.636
rn
0.383
0.376
0.327
0.313
Γopt
Mag Phase
0.5427
37.04
0.5287
40.24
0.4514
56.36
0.353
67.11
Association gain
(dB)
10.477
9.799
7.374
6.607
Gmax
(dB)
13.809
13.274
9.887
8.27
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TBN4227.PDF ] | |
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