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Número de pieza | NTMFS4899NF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTMFS4899NF
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Power MOSFET
30 V, 75 A, Single N−Channel, SO−8 FL
Features
• Integrated Schottky Diode
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 85°C
VDSS
VGS
ID
30
±20
17.8
12.9
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current
10 sec
RqJA
v
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
2.70 W
29.1 A
21
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
7.18 W
10.4 A
7.5
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
0.92 W
75 A
54
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
48 W
188 A
Current limited by package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 41 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDmaxpkg
TJ,
TSTG
IS
dV/dt
EAS
TL
90
−55 to
+150
46
6
84
260
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 0
1
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.0 mW @ 10 V
7.5 mW @ 4.5 V
ID MAX
75 A
N−CHANNEL MOSFET
D
G
S
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4899NF
AYWWG
D
GGD
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4899NFT1G
Package
SO−8FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4899NFT3G SO−8FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Publication Order Number:
NTMFS4899NF/D
1 page NTMFS4899NF
TYPICAL CHARACTERISTICS
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2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
Ciss
TJ = 25°C
VGS = 0 V
Coss
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
11
10 QT
9
8
7
6
5
4 Qgs
3
2
1
Qgd
ID = 30 A
TJ = 25°C
VDD = 15 V
VGS = 10 V
0
0 5 10 15 20 25
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
25 TJ = 25°C
20
15
10
5
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
100
VGS = 30 V
Single Pulse
TC = 25°C
10
1
10 ms
100
1 mmss
10 ms
0.1 RDS(on) Limit
Thermal Limit
Package Limit
dc
0.01
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100
90
80 ID = 41 A
70
60
50
40
30
20
10
0
25 50 75 100 125
TJ, STARTING JUNCTION TEMPERATURE(°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
150
1
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Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTMFS4899NF.PDF ] |
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