|
|
Número de pieza | NTMFS4898NF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NTMFS4898NF (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! NTMFS4898NF
www.DataSheet4U.com
Power MOSFET
30 V, 117 A, Single N−Channel, SO−8 FL
Features
• Integrated Schottky Diode
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 85°C
VDSS
VGS
ID
30
±20
22.5
16.2
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current
10 sec
RqJA
v
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
2.72 W
36.7 A
26.5
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
7.23 W
13.2 A
9.5
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
0.93 W
117 A
84.4
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
73.5 W
234 A
Current limited by package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 39 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDmaxpkg
TJ,
TSTG
IS
dV/dt
EAS
TL
100
−55 to
+150
92
6
228
260
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
3.0 mW @ 10 V
4.8 mW @ 4.5 V
ID MAX
117 A
N−CHANNEL MOSFET
D
G
S
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4898NF
AYWWG
D
GGD
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
NTMFS4898NFT1G SO−8FL
1500 /
(Pb−Free) Tape & Reel
NTMFS4898NFT3G SO−8FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
December, 2009 − Rev. 0
1
Publication Order Number:
NTMFS4898NF/D
1 page 1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
NTMFS4898NF
TYPICAL CHARACTERISTICS
td(off)
tf
tr
td(on)
30
VGS = 0 V
25 TJ = 25°C
20
15
10
www.DataSheet4U.com
5
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100 10 ms
10
1 VGS = 30 V
Single Pulse
TC = 25°C
0.1 RDS(on) Limit
Thermal Limit
0.01 Package Limit
0.1 1
100 ms
1 ms
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
160
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
250
ID = 39 A
200
150
100
50
0
25 50
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE(°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
140
120
100
80
60
40
20
0 VDS = 1.5 V
0 15 30 45 60 75 90 105 120
DRAIN CURRENT (A)
Figure 13. gFS vs. Drain Current
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTMFS4898NF.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTMFS4898NF | Power MOSFET ( Transistor ) | ON Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |