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NTMFS4897NF fiches techniques PDF

ON Semiconductor - 30 V N-Channel Power MOSFET

Numéro de référence NTMFS4897NF
Description 30 V N-Channel Power MOSFET
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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NTMFS4897NF fiche technique
NTMFS4897NF
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Power MOSFET
30 V, 171 A, Single NChannel, SO8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Includes Schottky Diode
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Device
Applications
CPU Power Delivery
DCDC Converters
Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
29 A
TA = 85°C
21
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current
10 sec
RqJA
v
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
2.74 W
47 A
34
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
7.3 W
17 A
12
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
0.95 W
171 A
123
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
96.2 W
288 A
Current limited by package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
IDmaxpkg
TJ,
TSTG
IS
dV/dt
100
55 to
+150
120
6
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 50 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
375 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
2.0 mW @ 10 V
3.0 mW @ 4.5 V
ID MAX
171 A
NCHANNEL MOSFET
D
G
S
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4897NF
AYWWG
D
GGD
D
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping
NTMFS4897NFT1G SO8FL
1500 /
(PbFree) Tape & Reel
NTMFS4897NFT3G SO8FL
5000 /
(PbFree) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
December, 2009 Rev. 0
1
Publication Order Number:
NTMFS4897NF/D

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