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PDF NDP06N62Z Data sheet ( Hoja de datos )
| Número de pieza | NDP06N62Z | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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NDF06N62Z, NDP06N62Z
www.DataSheet4U.com
N-Channel Power MOSFET
620 V, 0.98 W,
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF06N62Z NDP06N62Z Unit
Drain−to−Source Voltage
Continuous Drain Current
RqJC
Continuous Drain Current
RqJC, TA = 100°C
Pulsed Drain Current,
VGS @ 10 V
Power Dissipation RqJC
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, ID = 6.0 A
ESD (HBM)
(JESD 22−A114)
VDSS
ID
ID
IDM
PD
VGS
EAS
Vesd
620
6.0 (Note 1)
3.8 (Note 1)
20 (Note 1)
31 113
±30
113
3000
V
A
A
A
W
V
mJ
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 14)
Peak Diode Recovery
VISO
dv/dt
4500
−
4.5 (Note 2)
V
V/ns
Continuous Source
Current (Body Diode)
IS
6.0 A
Maximum Temperature for
Soldering Leads
TL
260 °C
Operating Junction and
TJ, Tstg
Storage Temperature Range
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ISD = 6.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
http://onsemi.com
VDSS
620 V
RDS(ON) (TYP) @ 3 A
0.98 Ω
N−Channel
D (2)
G (1)
TO−220FP
CASE 221D
STYLE 1
S (3)
MARKING
DIAGRAM
TO−220AB
CASE 221A
STYLE 5
A
Y
WW
G
NDF06N62ZG
or
NDP06N62ZG
AYWW
Gate
Source
Drain
= Location Code
= Year
= Work Week
= Pb−Free Package
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 0
ORDERING INFORMATION
Device
NDF06N62ZG
NDP06N62ZG
Package
TO−220FP
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
In Development
1 Publication Order Number:
NDF06N62Z/D
1 page  
NDF06N62Z, NDP06N62Z
TYPICAL CHARACTERISTICS
10
50% (DUTY CYCLE)
1.0
20%
10%
5.0%
0.1 2.0%
1.0%
0.01
SINGLE PULSE
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1 1.0
PULSE TIME (s)
Figure 13. Thermal Impedance for NDF06N62Z
www.DataSheet4U.com
RqJC = 4.0°C/W
Steady State
10 100 1000
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NDP06N62Z.PDF ] | |
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