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PDF NDD04N62Z Data sheet ( Hoja de datos )
| Número de pieza | NDD04N62Z | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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NDF04N62Z, NDP04N62Z,
NDD04N62Z
www.DataSheet4U.com
N-Channel Power MOSFET
620 V, 1.8 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol NDF NDP NDD Unit
Drain−to−Source Voltage
Continuous Drain Current
RqJC
Continuous Drain Current
RqJC, TA = 100°C
Pulsed Drain Current,
VGS @ 10V
Power Dissipation RqJC
(Note 1)
VDSS 620 V
ID 4.4 4.4 4.1 A
(Note 2)
ID 2.8 2.8 2.6 A
(Note 2)
IDM 18 18 16 A
(Note 2)
PD 28 96 83 W
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, ID = 4.0 A
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 14)
Peak Diode Recovery
VGS
EAS
Vesd
VISO
dv/dt
±30
120
4500
3000
−
V
mJ
V
−V
4.5 (Note 3)
V/ns
Continuous Source Current
(Body Diode)
IS
4.0 A
Maximum Temperature for
TL
300 °C
Soldering Leads, 0.063″
TPKG
260
(1.6 mm) from Case for
10 s Package Body for 10 s
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Limited by maximum junction temperature
3. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
http://onsemi.com
VDSS
620 V
RDS(ON) (TYP) @ 2 A
1.8 Ω
N−Channel
D (2)
G (1)
S (3)
4
4
1 23
1 23
1 23
12
3
TO−220FP TO−220AB IPAK
DPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 1 STYLE 5 STYLE 2 STYLE 2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 1
1
Publication Order Number:
NDF04N62Z/D
1 page  
NDF04N62Z, NDP04N62Z, NDD04N62Z
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
10
50% (DUTY CYCLE)
1.0
20%
10%
5.0%
0.1 2.0%
1.0%
0.01 SINGLE PULSE
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1 1.0
PULSE TIME (s)
Figure 13. Thermal Impedance for NDF04N62Z
RqJC = 4.4°C/W
Steady State
10 100 1000
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NDD04N62Z.PDF ] | |
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