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PDF NDF02N60Z Data sheet ( Hoja de datos )
| Número de pieza | NDF02N60Z | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET
600 V, 4.8 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF
NDD Unit
Drain−to−Source Voltage
Continuous
(Note 1)
Drain
Current
RqJC
VDSS
ID
600
2.4 2.2
V
A
Continuous
TA = 100°C
Drain Current
(Note 1)
RqJC
Pulsed Drain Current, VGS @ 10 V
Power Dissipation RqJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
ID = 2.4 A
ESD (HBM)
(JESD 22−A114)
ID
IDM
PD
VGS
EAS
Vesd
1.6 1.4 A
10
24
±30
120
9
57
A
W
V
mJ
2500
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 17)
Peak Diode Recovery (Note 2)
VISO
4500
dv/dt
4.5
V
V/ns
Continuous Source Current (Body
Diode)
IS
2.4 A
Maximum Temperature for Soldering
Leads
TL
260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. ISD = 2.4 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
www.onsemi.com
VDSS
600 V
RDS(on) (MAX) @ 1 A
4.8 W
N−Channel
D (2)
G (1)
S (3)
1 23
NDF02N60ZG,
NDF02N60ZH
TO−220FP
CASE 221AH
4
1 23
NDD02N60Z−1G
IPAK
CASE 369D
4
12
3
NDD02N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2014 − Rev. 8
1
Publication Order Number:
NDF02N60Z/D
1 page  
100
VGS v 30 V
SINGLE PULSE
10 TC = 25°C
1
NDF02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
100 ms 10 ms
1 ms
10 ms
dc
100
VGS v 30 V
SINGLE PULSE
10 TC = 25°C
1
100 ms
1 ms
10 ms
dc
10 ms
0.1
0.01
0.1
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDD02N60Z
1000
0.1
0.01
0.1
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area NDF02N60Z
10
1 50% (DUTY CYCLE)
20%
10%
5%
0.1 2%
1%
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 14. Thermal Impedance (Junction−to−Case) for NDD02N60Z
100
RqJC = 2.2°C/W
Steady State
1E+02
1E+03
10 50% (DUTY CYCLE)
20%
10%
1 5.0%
2.0%
1.0%
0.1
0.01
1E−06
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD02N60Z
RqJA = 41°C/W
Steady State
1E+02 1E+03
www.onsemi.com
5
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| PDF Descargar | [ Datasheet NDF02N60Z.PDF ] | |
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