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PDF IRF6706S2TR1PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6706S2TR1PBF | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l RoHS Compliant and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
PD - 97485
IRF6706S2TRPbFwww.DataSheet4U.com
IRF6706S2TR1PbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 3.0mΩ@10V 5.2mΩ@4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
13nC 4.4nC 1.8nC 21nC 9.5nC 1.8V
D GS
D
Applicable DirectFET Outline and Substrate Outline
S1 S2 SB
M2
M4
S1
L4
DirectFET ISOMETRIC
L6 L8
Description
The IRF6706S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6706S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6706S2TRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±20
17
13
63
130
42
13
Units
V
A
mJ
A
15 14.0
ID = 17A
12.0 ID= 13A
10
10.0
VDS= 20V
VDS= 13V
8.0
TJ = 125°C
6.0
5 4.0
TJ = 25°C
0
0 2 4 6 8 10 12 14 16 18 20
2.0
0.0
0
10 20 30
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.50mH, RG = 25Ω, IAS = 13A.
1
03/31/2010
1 page  
1000
100 TJ = 175°C
TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
70
60
50
40
30
20
10
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 12. Maximum Drain Current vs. Case Temperature
100
TJ = 25°C
80
60
TJ = 175°C
40
220 VDS = 4.5V
380µs PULSE WIDTH
0
0 10 20 30 40 50 60
ID,Drain-to-Source Current (A)
Fig 14. Typ. Forward Transconductance
vs. Drain Current
www.irf.com
IRF6706S2TR/TR1PbFwww.DataSheet4U.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
1 10msec
DC
0.1 TA = 25°C
TJ = 150°C
Single Pulse
0.01
0.01 0.10 1.00 10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
ID = 25µA
1.0 ID = 250µA
ID = 1.0mA
0.5 ID = 1.0A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
180
160
TOP
ID
2.3A
140 5.6A
BOTTOM 13A
120
100
80
60
40
20
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy
vs. Drain Current
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF6706S2TR1PBF.PDF ] | |
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