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PDF PBSS5630PA Data sheet ( Hoja de datos )
| Número de pieza | PBSS5630PA | |
| Descripción | 6 A PNP low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
Rev. 01 — 19 March 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4630PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp 300 s; 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 6 A;
IB = 300 mA
Min Typ Max Unit
- - 30 V
- - 6 A
- - 7 A
[1] -
39 58 m
1 page  
NXP Semiconductors
www.DataSheet4U.com
PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02 0.01
0
006aab981
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02 0.01
1
0
006aab982
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5630PA_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
11. Soldering
1.05
2.3 0.6 0.55
www.DataSheet4U.com
PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
2.1
1.3
0.5 (2×)
0.4 (2×)
0.5 (2×) 0.6 (2×)
0.25
1.1
1.2
0.25 0.25
0.4
0.5
1.6
solder paste = solder lands
1.7
solder resist
occupied area
Dimensions in mm
sot1061_fr
Reflow soldering is the only recommended soldering method.
Fig 17. Reflow soldering footprint SOT1061 (HUSON3)
PBSS5630PA_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
11 of 15
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| Páginas | Total 15 Páginas | |
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