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Numéro de référence | PBSS4041NZ | ||
Description | 7 A NPN low VCEsat (BISS) transistor | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
PBSS4041NZ
60 V, 7 A NPN low VCEsat (BISS) transistor
Rev. 01 — 31 March 2010
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Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4041PZ.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ≤ 1 ms
IC = 6 A;
IB = 600 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 60 V
- - 7A
- - 15 A
[1] -
17.5 25
mΩ
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Pages | Pages 15 | ||
Télécharger | [ PBSS4041NZ ] |
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