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NXP Semiconductors - 7 A NPN low VCEsat (BISS) transistor

Numéro de référence PBSS4041NZ
Description 7 A NPN low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS4041NZ fiche technique
PBSS4041NZ
60 V, 7 A NPN low VCEsat (BISS) transistor
Rev. 01 — 31 March 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4041PZ.
1.2 Features and benefits
„ Very low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High energy efficiency due to less heat generation
„ AEC-Q101 qualified
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ Loadswitch
„ Battery-driven devices
„ Power management
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp 1 ms
IC = 6 A;
IB = 600 mA
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 60 V
- - 7A
- - 15 A
[1] -
17.5 25
mΩ

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