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PDF PBSS4032PZ Data sheet ( Hoja de datos )
| Número de pieza | PBSS4032PZ | |
| Descripción | 4.4 A PNP low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS4032PZ
30 V, 4.4 A PNP low VCEsat (BISS) transistor
Rev. 01 — 31 March 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power
SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4032NZ.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ≤ 1 ms
IC = −4 A;
IB = −400 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - −30 V
- - −4.4 A
- - −10 A
[1] -
58 86 mΩ
1 page  
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PBSS4032PZ
30 V, 4.4 A PNP low VCEsat (BISS) transistor
102
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
1
0
006aac154
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.33
0.50
0.20
0.10
0.05
0.02
0.01
1
0
006aac155
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032PZ_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 31 March 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
11. Soldering
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PBSS4032PZ
30 V, 4.4 A PNP low VCEsat (BISS) transistor
1.3 1.2
(4×) (4×)
7
3.85
3.6
3.5
0.3
4
3.9 6.1 7.65
1 23
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
2.3
1.2
(3×)
1.3
(3×)
6.15
2.3
Fig 16. Reflow soldering footprint SOT223 (SC-73)
8.9
6.7
PBSS4032PZ_1
Product data sheet
1.9
4
6.2 8.7
1 23
1.9
(3×)
2.7 2.7
1.1
1.9
(2×)
Fig 17. Wave soldering footprint SOT223 (SC-73)
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 31 March 2010
sot223_fr
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot223_fw
© NXP B.V. 2010. All rights reserved.
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| Páginas | Total 15 Páginas | |
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