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Excelics Semiconductor - 21.0 - 24.0 GHz Power Amplifier MMIC

Numéro de référence EMP312
Description 21.0 - 24.0 GHz Power Amplifier MMIC
Fabricant Excelics Semiconductor 
Logo Excelics Semiconductor 





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EMP312 fiche technique
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UPDATED 04/04/2008
EMP312
21.0 – 24.0 GHz Power Amplifier MMIC
FEATURES
21.0 – 24.0 GHz Operating Frequency Range
28.5dBm Output Power at 1dB Compression
13.0 dB Typical Small Signal Gain
-40dBc OIMD3 @Each Tone Pout 18.5dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2140um X 2650um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=760mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
F Operating Frequency Range
21.0
24.0
P1dB
Output Power at 1dB Gain Compression
27.0
28.5
Gss
OIMD3
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 18.5dBm
10.0
13.0
-40
-37
Input RL Input Return Loss
-15 -10
Output RL Output Return Loss
-15 -10
Idss
VDD
Rth
Saturate Drain Current
Power Supply Voltage
VDS =3V, VGS =0V
Thermal Resistance (Au-Sn Eutectic Attach)
858
1072
1288
78
8
Tb Operating Base Plate Temperature
-35 +85
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
oC/W
ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
8V
VGS Gate to Source Voltage
-4 V
IDD Drain Current
Idss
IGSF Forward Gate Current
15mA
PIN Input Power
@ 3dB compression
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/150°C
PT Total Power Dissipation
12.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised April 2008

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