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Excelics Semiconductor - 21.0 - 24.0 GHz Power Amplifier MMIC

Numéro de référence EMP310
Description 21.0 - 24.0 GHz Power Amplifier MMIC
Fabricant Excelics Semiconductor 
Logo Excelics Semiconductor 





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EMP310 fiche technique
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UPDATED 05/08/2008
EMP310
21.0 – 24.0 GHz Power Amplifier MMIC
FEATURES
21.0 – 24.0 GHz Operating Frequency Range
24.0dBm Output Power at 1dB Compression
14.0 dB Typical Small Signal Gain
-40dBc OIMD3 @Each Tone Pout 14dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2250um X 1000um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=170mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX
F Operating Frequency Range
21.0
24.0
P1dB
Output Power at 1dB Gain Compression
23.0
24.0
Gss
OIMD3
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 14dBm
11.0
14.0
-40
-37
Input RL Input Return Loss
-10 -8
Output RL Output Return Loss
-10 -8
Idss
Saturate Drain Current
VDS =3V, VGS =0V
211 264 317
VDD Power Supply Voltage
78
Rth Thermal Resistance (Au-Sn Eutectic Attach)
34
Tb Operating Base Plate Temperature
-35 +85
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
oC/W
ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
VDS
VGS
IDD
IGSF
PIN
TCH
TSTG
PT
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
VALUE
8V
-4 V
Idss
4mA
@ 3dB compression
150°C
-65/150°C
3.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3
Revised May 2008

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