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PDF NTTFS5820NL Data sheet ( Hoja de datos )
| Número de pieza | NTTFS5820NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTTFS5820NL
www.DataSheet4U.com
Power MOSFET
60 V, 37 A, 11.5 mW
Features
• Low RDS(on)
• Low Capacitance
• Optimized Gate Charge
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
TA = 100°C
Power Dissipation
(Note 1)
RqJA
Continuous Drain
Current RqJC (Note 1)
Steady
State
TA = 25°C
TA = 100°C
TC = 25°C
TC = 100°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
TC = 100°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ,
Tstg
60
±20
11
7
2.7
1.1
37
24
33
13
149
−55 to
+150
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source
Avalanche Energy
L = 0.1 mH
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS
EAS
IAS
TL
37 A
48 mJ
31 A
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case – Steady
State (Note 1)
RqJC
3.8 °C/W
Junction−to−Ambient – Steady
State (Note 1)
RqJA
46.7
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
11.5 mW @ 10 V
15 mW @ 4.5 V
ID MAX
37 A
N−Channel MOSFET
D (5−8)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
SD
S 5820 D
S AYWWG D
GGD
5820
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS5820NLTAG WDFN8 1500 / Tape & Reel
(Pb−Free)
NTTFS5820NLTWG WDFN8 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 0
1
Publication Order Number:
NTTFS5820NL/D
1 page  
NTTFS5820NL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
10 0.2
0.1
1 0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
1
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10 100 1000
http://onsemi.com
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