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PDF FDME1024NZT Data sheet ( Hoja de datos )
| Número de pieza | FDME1024NZT | |
| Descripción | Dual N-Channel Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
December 2009
FDME1024NZT
Dual N-Channel Power Trench® MOSFET
20 V, 3.4 A, 66 mΩ
Features
Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600V (Note3)
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for dual switching requirement in cellular handset and other ultra-
portable applications. It features two independent N-Channel
MOSFETs with low on-state resistance for minimum conduction
losses.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
Baseband Switch
Load Switch
G1
S1
D2
Pin 1
D1
D2
S2
G2
D1
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
BOTTOM
MicroFET 1.6x1.6 Thin
TOP
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
3.4
6
1.3
0.6
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
95
210
°C/W
Device Marking
4T
Device
FDME1024NZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2009 Fairchild Semiconductor Corporation
FDME1024NZT Rev.C
1
www.fairchildsemi.com
1 page  
www.DataSheet4U.com
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.005
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
RθJA = 210 oC/W
10-3
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 1
t, RECTANGULAR PULSE DURATION (sec)
10
100
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
FDME1024NZT Rev.C
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDME1024NZT.PDF ] | |
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