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FDFME2P823ZT fiches techniques PDF

Fairchild Semiconductor - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Numéro de référence FDFME2P823ZT
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDFME2P823ZT fiche technique
FDFME2P823ZT
July 2010
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
-20 V, -2.6 A, 142 mΩ
Features
General Description
„ Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
„ Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
„ Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
„ Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
„ Schottky: VF < 0.57 V @ 1A
„ Free from halogenated compounds and antimony oxides
„ HBM ESD protection level > 1600 V (Note 3)
„ RoHS Compliant
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable appliacrions. It features as MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum condution losses.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
„ Battery Charging
„ DC-DC Conversion
Pin 1
NC
A
D
K
D
S
G
K
A1
NC 2
D3
6K
5G
4S
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
VRRM
IO
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Schottky Repetitive Peak Reverse Voltage
TA = 25 °C
TA = 25 °C
Schottky Average Forward Current
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
Ratings
-20
±8
-2.6
-6
1.4
0.6
28
1
-55 to +150
Units
V
V
A
W
V
A
°C
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
90
195
110
234
°C/W
Device Marking
3T
Device
FDFME2P823ZT
©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
Package
MicroFET 1.6x1.6 Thin
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com

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