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BLF7G22LS-250P fiches techniques PDF

NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLF7G22LS-250P
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLF7G22LS-250P fiche technique
BLF7G22L-250P;
BLF7G22LS-250P
Power LDMOS transistor
Rev. 01 — 6 May 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
2110 MHz to 2170 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
ηD ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
1900 28 70
18 30 28[1]
[1] Test signal: 3GPP; test model 1; 1-64 PDPCH; PAR = 7.5 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
„ Excellent ruggedness
„ High efficiency
„ Low Rth providing excellent thermal stability
„ Designed for broadband operation (2110 MHz to 2170 MHz)
„ Lower output capacitance for improved performance in Doherty applications
„ Designed for low memory effects providing excellent pre-distortability
„ Internally matched for ease of use
„ Integrated ESD protection
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2110 MHz to 2170 MHz frequency range

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