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Numéro de référence | BLF7G22LS-250P | ||
Description | Power LDMOS transistor | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
BLF7G22L-250P;
BLF7G22LS-250P
Power LDMOS transistor
Rev. 01 — 6 May 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
2110 MHz to 2170 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
ηD ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
1900 28 70
18 30 −28[1]
[1] Test signal: 3GPP; test model 1; 1-64 PDPCH; PAR = 7.5 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (2110 MHz to 2170 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2110 MHz to 2170 MHz frequency range
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Pages | Pages 9 | ||
Télécharger | [ BLF7G22LS-250P ] |
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